JPH0463550B2 - - Google Patents

Info

Publication number
JPH0463550B2
JPH0463550B2 JP58036751A JP3675183A JPH0463550B2 JP H0463550 B2 JPH0463550 B2 JP H0463550B2 JP 58036751 A JP58036751 A JP 58036751A JP 3675183 A JP3675183 A JP 3675183A JP H0463550 B2 JPH0463550 B2 JP H0463550B2
Authority
JP
Japan
Prior art keywords
layer
type layer
region
type
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58036751A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59163875A (ja
Inventor
Hajime Ichanagi
Tadashi Igarashi
Masayuki Ishii
Chuichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58036751A priority Critical patent/JPS59163875A/ja
Priority to GB08405687A priority patent/GB2137810B/en
Priority to DE3408317A priority patent/DE3408317C2/de
Priority to US06/587,702 priority patent/US4612559A/en
Priority to FR848403598A priority patent/FR2542503B1/fr
Publication of JPS59163875A publication Critical patent/JPS59163875A/ja
Publication of JPH0463550B2 publication Critical patent/JPH0463550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP58036751A 1983-03-08 1983-03-08 アモルフアスシリコン太陽電池 Granted JPS59163875A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58036751A JPS59163875A (ja) 1983-03-08 1983-03-08 アモルフアスシリコン太陽電池
GB08405687A GB2137810B (en) 1983-03-08 1984-03-05 A solar cell of amorphous silicon
DE3408317A DE3408317C2 (de) 1983-03-08 1984-03-07 Solarzelle aus amorphem Silicium
US06/587,702 US4612559A (en) 1983-03-08 1984-03-08 Solar cell of amorphous silicon
FR848403598A FR2542503B1 (fr) 1983-03-08 1984-03-08 Cellule solaire en silicium amorphe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58036751A JPS59163875A (ja) 1983-03-08 1983-03-08 アモルフアスシリコン太陽電池

Publications (2)

Publication Number Publication Date
JPS59163875A JPS59163875A (ja) 1984-09-14
JPH0463550B2 true JPH0463550B2 (en]) 1992-10-12

Family

ID=12478432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58036751A Granted JPS59163875A (ja) 1983-03-08 1983-03-08 アモルフアスシリコン太陽電池

Country Status (1)

Country Link
JP (1) JPS59163875A (en])

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190476A (ja) * 1984-10-09 1986-05-08 Sanyo Electric Co Ltd 光起電力装置
JPS62106670A (ja) * 1985-11-05 1987-05-18 Kanegafuchi Chem Ind Co Ltd 半導体素子
JPS62232173A (ja) * 1986-04-01 1987-10-12 Toa Nenryo Kogyo Kk アモルフアスシリコン太陽電池
JPS63289970A (ja) * 1987-05-22 1988-11-28 Matsushita Electric Ind Co Ltd 太陽電池電源
JPS6432683A (en) * 1987-07-28 1989-02-02 Japan Engine Valve Mfg Semiconductor element
JP2609873B2 (ja) * 1987-10-19 1997-05-14 三洋電機株式会社 光起電力装置
JPH0180961U (en]) * 1987-11-20 1989-05-30
JPH04211179A (ja) * 1991-03-27 1992-08-03 Kanegafuchi Chem Ind Co Ltd スイッチング素子
EP2319094A2 (en) * 2008-08-19 2011-05-11 Oerlikon Solar AG, Trübbach Photovoltaic cell and method of manufacturing a photovoltaic cell

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material

Also Published As

Publication number Publication date
JPS59163875A (ja) 1984-09-14

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